类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR)Cut Tape (CT) |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NAND |
内存大小: | 2Gb (256M x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 48-TFSOP (0.724", 18.40mm Width) |
供应商设备包: | 48-TSOP I |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT48H16M32LFCM-75 IT:B TRMicron Technology |
IC DRAM 512MBIT PARALLEL 90VFBGA |
|
IS43TR16256B-093NBLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 4GBIT PARALLEL 96TWBGA |
|
AT49BV512-90VCRoving Networks / Microchip Technology |
IC FLASH 512KBIT PARALLEL 32VSOP |
|
MT29E1T08CMHBBJ4-3ES:B TRMicron Technology |
IC FLASH 1TB PARALLEL 132VBGA |
|
AT24C16BN-SH-BRoving Networks / Microchip Technology |
IC EEPROM 16KBIT I2C 1MHZ 8SOIC |
|
S29GL256N10FAA020Cypress Semiconductor |
IC FLASH MEMORY NOR PARALLEL |
|
6116SA35SOGRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 24SOIC |
|
MT41K1G8RKB-107:N TRMicron Technology |
IC DRAM 8GBIT PARALLEL 78FBGA |
|
S29GL128P10TAI010Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 56TSOP |
|
MT25QL128ABA1ESF-0SIT TRMicron Technology |
IC FLASH 128MBIT SPI 133MHZ 16SO |
|
AT29C512-20PIRoving Networks / Microchip Technology |
IC FLASH 512KBIT PARALLEL 32DIP |
|
AT27C010L-70JCRoving Networks / Microchip Technology |
IC EPROM 1MBIT PARALLEL 32PLCC |
|
IS42S32400E-6TLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 86TSOP II |