类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, Asynchronous |
内存大小: | 512Kb (32K x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 20ns |
访问时间: | 20 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 100-LQFP |
供应商设备包: | 100-TQFP (14x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IDT71V432S7PFRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 100TQFP |
|
CY7C145-15AXCTCypress Semiconductor |
IC SRAM 72KBIT PARALLEL 80TQFP |
|
CYD09S72V18-250BBXCCypress Semiconductor |
IC SRAM 9MBIT PARALLEL 256FBGA |
|
CAT24C02YI-GT3ASanyo Semiconductor/ON Semiconductor |
IC EEPROM 2KBIT I2C 8TSSOP |
|
W25Q128JVFJMWinbond Electronics Corporation |
IC FLASH 128MBIT SPI/QUAD 16SOIC |
|
AS4C4M32S-7TCNTRAlliance Memory, Inc. |
IC DRAM 128MBIT PAR 86TSOP II |
|
MT29F2G16AABWP TRMicron Technology |
IC FLASH 2GBIT PARALLEL 48TSOP I |
|
IS42S16160J-6TI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 54TSOP II |
|
S29GL032N90DAI020Cypress Semiconductor |
IC FLASH 32MBIT PARALLEL 64FBGA |
|
S34MS01G200BHB000SkyHigh Memory Limited |
IC FLASH 1G PARALLEL |
|
AT27BV256-12RCRoving Networks / Microchip Technology |
IC EPROM 256KBIT PARALLEL 28SOIC |
|
W25X40VSNIGWinbond Electronics Corporation |
IC FLASH 4MBIT SPI 75MHZ 8SOIC |
|
MT46V16M16CY-5B XIT:M TRMicron Technology |
IC DRAM 256MBIT PARALLEL 60FBGA |