English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - DDR3 |
| 内存大小: | 1Gb (128M x 8) |
| 内存接口: | Parallel |
| 时钟频率: | 933 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | 1.425V ~ 1.575V |
| 工作温度: | 0°C ~ 95°C (TC) |
| 安装类型: | Surface Mount |
| 包/箱: | 78-TFBGA |
| 供应商设备包: | 78-FBGA (8x11.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
N25Q128A13E1240EMicron Technology |
IC FLASH 128MBIT SPI 24TPBGA |
|
IS46DR81280B-25DBLA2-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 60TWBGA |
|
W25Q64FVTBIPWinbond Electronics Corporation |
IC FLASH 64MBIT SPI/QUAD 24TFBGA |
|
MT45W1MW16BAFB-856 WTMicron Technology |
IC PSRAM 16MBIT PARALLEL 54VFBGA |
|
LHF00L28Sharp Microelectronics |
IC FLASH 16MBIT PARALLEL 48TSOP |
|
IS43DR16160A-37CBLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 84TWBGA |
|
MT46V32M8P-5B IT:KMicron Technology |
IC DRAM 256MBIT PARALLEL 66TSOP |
|
IS61LF102418A-7.5TQISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 100TQFP |
|
IDT71V2576YS150PFRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
AS4C32M16SM-7TCNTRAlliance Memory, Inc. |
IC DRAM 512MBIT PAR 54TSOP II |
|
MTFC8GAMALBH-AAT ES TRMicron Technology |
IC FLASH 64GBIT MMC 153TFBGA |
|
S29GL128S11FFB023Cypress Semiconductor |
IC FLASH 128MB FLASH NOR 64FBGA |
|
IDT71V2559S75PF8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
