类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH |
内存大小: | 512Kb (64K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 30µs |
访问时间: | 120 ns |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TC) |
安装类型: | Surface Mount |
包/箱: | 32-LCC (J-Lead) |
供应商设备包: | 32-PLCC (13.97x11.43) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
25LC040AT-E/SN16KVAORoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 10MHZ 8SOIC |
|
S34ML01G200TFB000SkyHigh Memory Limited |
IC FLASH 1G PARALLEL 48TSOP I |
|
AT25020A-10PI-2.7Roving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 20MHZ 8DIP |
|
IS61NVP51236-250B3-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |
|
AT25HP256-10CI-2.7Roving Networks / Microchip Technology |
IC EEPROM 256KBIT SPI 10MHZ 8LAP |
|
AT25020N-10SC-2.7Roving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 3MHZ 8SOIC |
|
IDT71V016SA15PHRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 44TSOP II |
|
IS25LQ080B-JKLEISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 8MBIT SPI/QUAD 8WSON |
|
IS46TR16640B-125JBLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 96TWBGA |
|
AT34C02N-10SIRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8SOIC |
|
MT46H64M32LFMA-6 WT:BMicron Technology |
IC DRAM 2GBIT PARALLEL 168WFBGA |
|
AT24C128Y1-10YI-2.7Roving Networks / Microchip Technology |
IC EEPROM 128KBIT I2C 1MHZ 8MAP |
|
JS28F256M29EWHB TRMicron Technology |
IC FLASH 256MBIT PARALLEL 56TSOP |