类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 64Kb (8K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 10ms |
访问时间: | 150 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | 0°C ~ 70°C (TC) |
安装类型: | Surface Mount |
包/箱: | 32-LCC (J-Lead) |
供应商设备包: | 32-PLCC (13.97x11.43) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AT24C02A-10TI-1.8Roving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 8TSSOP |
|
IS42S32400E-6TL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 86TSOP II |
|
IDT71V3556S166PFRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
M29F400BB70N6EMicron Technology |
IC FLASH 4MBIT PARALLEL 48TSOP |
|
IS61DDB41M36C-300M3LIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 36MBIT PARALLEL 165LFBGA |
|
CY7C1041BNV33L-15ZXCTCypress Semiconductor |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
AT24C02A-10PC-1.8Roving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8DIP |
|
AS4C4M16S-6BINAlliance Memory, Inc. |
IC DRAM 64MBIT PARALLEL 54TFBGA |
|
IDT71V35761S166BQGIRenesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
W25Q80JVZPIQWinbond Electronics Corporation |
IC FLASH 8MBIT SPI 133MHZ 8WSON |
|
IDT71V3577SA85BGGRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
SST25PF080B-80-4C-QAE-TRoving Networks / Microchip Technology |
IC FLASH 8MBIT SPI 80MHZ 8WSON |
|
70121S25J8Renesas Electronics America |
IC SRAM 18KBIT PARALLEL 52PLCC |