类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR |
内存大小: | 4.5Mb (128K x 36) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | 8.5 ns |
电压 - 电源: | 3.135V ~ 3.465V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 119-BGA |
供应商设备包: | 119-PBGA (14x22) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SST25PF080B-80-4C-QAE-TRoving Networks / Microchip Technology |
IC FLASH 8MBIT SPI 80MHZ 8WSON |
|
70121S25J8Renesas Electronics America |
IC SRAM 18KBIT PARALLEL 52PLCC |
|
W25X40VZPIGWinbond Electronics Corporation |
IC FLASH 4MBIT SPI 75MHZ 8WSON |
|
AS4C256M16D3-12BCNAlliance Memory, Inc. |
IC DRAM 4GBIT PARALLEL 96FBGA |
|
M29F080D90N1STMicroelectronics |
IC FLASH 8MBIT PARALLEL 40TSOP |
|
71V35761S200BGI8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
AT49LV002N-12TIRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32TSOP |
|
IS42S16160B-7TLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 54TSOP II |
|
W9412G6JH-4Winbond Electronics Corporation |
IC DRAM 128MBIT PAR 66TSOP II |
|
MT29F64G08CBCDBJ4-6R:DMicron Technology |
IC FLASH 64GBIT PARALLEL 132VBGA |
|
IS61QDB41M36-250M3LISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 36MBIT PARALLEL 165LFBGA |
|
AS4C128M8D3A-12BINTRAlliance Memory, Inc. |
IC DRAM 1GBIT PARALLEL 78FBGA |
|
W632GG8KB12I TRWinbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 78WBGA |