English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Discontinued at Digi-Key |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Synchronous, QUAD |
| 内存大小: | 36Mb (1M x 36) |
| 内存接口: | Parallel |
| 时钟频率: | 250 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 7.5 ns |
| 电压 - 电源: | 1.71V ~ 1.89V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 165-LBGA |
| 供应商设备包: | 165-LFBGA (15x17) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AS4C128M8D3A-12BINTRAlliance Memory, Inc. |
IC DRAM 1GBIT PARALLEL 78FBGA |
|
W632GG8KB12I TRWinbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 78WBGA |
|
AT28C010-25UM/883Roving Networks / Microchip Technology |
IC EEPROM 1MBIT PARALLEL 30CPGA |
|
70V06S55PF8Renesas Electronics America |
IC SRAM 128KBIT PARALLEL 64TQFP |
|
MT47H128M8B7-37E:A TRMicron Technology |
IC DRAM 1GBIT PARALLEL 92FBGA |
|
W948D6FBHX5EWinbond Electronics Corporation |
IC DRAM 256MBIT PARALLEL 60VFBGA |
|
IS25WP016-JNLEISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 16MBIT SPI/QUAD 8SOIC |
|
M29W320EB70ZE6F TRMicron Technology |
IC FLASH 32MBIT PARALLEL 48TFBGA |
|
7024L20JIRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 84PLCC |
|
71421LA25PFI8Renesas Electronics America |
IC SRAM 16KBIT PARALLEL 64TQFP |
|
IDT71016S15YRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 44SOJ |
|
DS1250YP-100+Maxim Integrated |
IC NVSRAM 4MBIT PAR 34PWRCAP |
|
MT46V32M16FN-75 L:CMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |
