类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - DDR3 |
内存大小: | 2Gb (128M x 16) |
内存接口: | Parallel |
时钟频率: | 800 MHz |
写周期时间 - 字,页: | 15ns |
访问时间: | 20 ns |
电压 - 电源: | 1.425V ~ 1.575V |
工作温度: | -40°C ~ 105°C (TC) |
安装类型: | Surface Mount |
包/箱: | 96-TFBGA |
供应商设备包: | 96-TWBGA (9x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SST39SF010A-45-4I-NHE-TRoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32PLCC |
|
AT49BV1614T-11CIRoving Networks / Microchip Technology |
IC FLASH 16MBIT PARALLEL 48TSOP |
|
AT27C512R-70PCRoving Networks / Microchip Technology |
IC EPROM 512KBIT PARALLEL 28DIP |
|
NM27C512Q150Sanyo Semiconductor/ON Semiconductor |
IC EPROM 512KBIT PARALLEL 28CDIP |
|
AT29LV040A-15TIRoving Networks / Microchip Technology |
IC FLASH 4MBIT PARALLEL 32TSOP |
|
AT27LV512A-12JCRoving Networks / Microchip Technology |
IC EPROM 512KBIT PARALLEL 32PLCC |
|
MT48LC16M16A2P-7E:GMicron Technology |
IC DRAM 256MBIT PAR 54TSOP II |
|
IS49FL004T-33JCEISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 4MBIT PARALLEL 32PLCC |
|
R1RP0416DSB-2PR#D1Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
DS1220AD-100Maxim Integrated |
IC NVSRAM 16KBIT PARALLEL 24EDIP |
|
AT93C57-10SC-2.5Roving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 2MHZ 8SOIC |
|
PZ28F064M29EWHAMicron Technology |
IC FLASH 64MBIT PARALLEL 48BGA |
|
W632GG6KB12I TRWinbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 96WBGA |