类型 | 描述 |
---|---|
系列: | SpiFlash® |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 128Mb (16M x 8) |
内存接口: | SPI - Quad I/O, QPI |
时钟频率: | 104 MHz |
写周期时间 - 字,页: | 50µs, 3ms |
访问时间: | - |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 105°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-WDFN Exposed Pad |
供应商设备包: | 8-WSON (6x5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AT25320T1-10TI-2.7Roving Networks / Microchip Technology |
IC EEPROM 32KBIT SPI 14TSSOP |
|
IS61VF102418A-6.5B3IISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |
|
S34MS01G200TFI903SkyHigh Memory Limited |
IC FLASH 1G PARALLEL 48TSOP I |
|
7027S25PFRenesas Electronics America |
IC SRAM 512KBIT PARALLEL 100TQFP |
|
70V657S12DRIRenesas Electronics America |
IC SRAM 1.125MBIT PAR 208PQFP |
|
CY7C1361C-100BGCTCypress Semiconductor |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
MT53D384M32D2DS-046 WT ES:EMicron Technology |
IC DRAM 12GBIT 2133MHZ 200WFBGA |
|
IDT71V416YL10YRenesas Electronics America |
IC SRAM 4MBIT PARALLEL 44SOJ |
|
IDT71V65603S100PF8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
M24C08-RDS6GSTMicroelectronics |
IC EEPROM 8KBIT I2C 400KHZ 8MSOP |
|
IS42S32200C1-6TL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PAR 86TSOP II |
|
N25Q064A13ESEC0GMicron Technology |
IC FLASH 64MBIT SPI 108MHZ 8SO W |
|
MT28EW256ABA1HPC-1SITMicron Technology |
IC FLASH 256MBIT PARALLEL 64LBGA |