HEX KEY L SHAPE 7/64" 3.62"
IC SRAM 18MBIT PARALLEL 100TQFP
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR (ZBT) |
内存大小: | 18Mb (1M x 18) |
内存接口: | Parallel |
时钟频率: | 100 MHz |
写周期时间 - 字,页: | - |
访问时间: | 5 ns |
电压 - 电源: | 2.375V ~ 2.625V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 100-LQFP |
供应商设备包: | 100-TQFP (14x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS61NLP102418-200B3-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |
|
70V34L15PF8Renesas Electronics America |
IC SRAM 72KBIT PARALLEL 100TQFP |
|
W25Q80BWSNIGWinbond Electronics Corporation |
IC FLASH 8MBIT SPI 80MHZ 8SOIC |
|
IS63LV1024L-10JLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
MT48LC4M32B2F5-7:G TRMicron Technology |
IC DRAM 128MBIT PARALLEL 90VFBGA |
|
SST39SF040-45-4C-WHERoving Networks / Microchip Technology |
IC FLASH 4MBIT PARALLEL 32TSOP |
|
CAT28C256GI12Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 256KBIT PAR 32PLCC |
|
IS61DDB21M36A-250M3LISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 36MBIT PARALLEL 165LFBGA |
|
MT46V32M4P-5B:D TRMicron Technology |
IC DRAM 128MBIT PARALLEL 66TSOP |
|
70V35S20PF8Renesas Electronics America |
IC SRAM 144K PARALLEL 100TQFP |
|
S29GL128S11FFA023Cypress Semiconductor |
IC FLASH 128MB FLASH NOR 64FBGA |
|
S29AS016J70BFA042Cypress Semiconductor |
IC FLASH 16MBIT PARALLEL 48FBGA |
|
MT47H32M16BT-37E:A TRMicron Technology |
IC DRAM 512MBIT PARALLEL 92FBGA |