类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 4Mb (256K x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 12ns |
访问时间: | 12 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 44-TSOP (0.400", 10.16mm Width) |
供应商设备包: | 44-TSOP II |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY22E016L-SZ35XICypress Semiconductor |
IC NVSRAM 16KBIT PARALLEL 28SOIC |
|
IS61VF51236A-7.5B3I-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |
|
IS46LD32320A-3BPLA2-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 168VFBGA |
|
FM25040B-GATRCypress Semiconductor |
IC FRAM 4KBIT SPI 14MHZ 8SOIC |
|
W25Q128FVEJQ TRWinbond Electronics Corporation |
IC FLASH 128MBIT SPI/QUAD 8WSON |
|
AK6416AMAsahi Kasei Microdevices / AKM Semiconductor |
IC EEPROM 16KBIT SPI 4MHZ 8SSOP |
|
IS61VPS51236A-200B3IISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |
|
MT41K256M8DA-125:K TRMicron Technology |
IC DRAM 2GBIT PARALLEL 78FBGA |
|
AT45DQ321-MHD2B-TAdesto Technologies |
IC FLASH 32MBIT SPI 104MHZ 8UDFN |
|
SST26VF032-80-5I-QAERoving Networks / Microchip Technology |
IC FLASH 32MBIT SPI/QUAD 8WSON |
|
IS61LV51216-10TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 8MBIT PARALLEL 44TSOP II |
|
IDT71V67602S133PFI8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
R1LV0216BSB-5SI#S0Renesas Electronics America |
IC SRAM 2MBIT PARALLEL 44TSOP II |