类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q100 |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 4Kb (512 x 8, 256 x 16) |
内存接口: | SPI |
时钟频率: | 1 MHz |
写周期时间 - 字,页: | 5ms |
访问时间: | - |
电压 - 电源: | 2.5V ~ 5.5V |
工作温度: | -40°C ~ 125°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-TSSOP (0.173", 4.40mm Width) |
供应商设备包: | 8-TSSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
F640SPHT-PTLZ8Sharp Microelectronics |
IC FLASH 64MBIT PARALLEL 56TSOP |
|
MT48H8M16LFB4-75 IT:K TRMicron Technology |
IC DRAM 128MBIT PARALLEL 54VFBGA |
|
N25Q512A83G1240EMicron Technology |
IC FLASH 512MBIT SPI 24TPBGA |
|
AT27C1024-55JIRoving Networks / Microchip Technology |
IC EPROM 1MBIT PARALLEL 44PLCC |
|
AT28BV16-30SCRoving Networks / Microchip Technology |
IC EEPROM 16KBIT PARALLEL 24SOIC |
|
AT29LV020-10JIRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32PLCC |
|
SST39VF400A-70-4I-M1QE-TRoving Networks / Microchip Technology |
IC FLASH 4MBIT PARALLEL 48WFBGA |
|
MT40A512M16JY-075E IT:B TRMicron Technology |
IC DRAM 8GBIT PARALLEL 96FBGA |
|
AS4C8M16S-7TCNAlliance Memory, Inc. |
IC DRAM 128MBIT PAR 54TSOP II |
|
IS46TR16640A-125JBLA2-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 96TWBGA |
|
W632GG8KB15IWinbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 78WBGA |
|
IDT71V2548S150BGRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
7007S20PF8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 80TQFP |