类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | DRAM |
内存大小: | 16Mb (1M x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 104ns |
访问时间: | 30 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 50-TSOP (0.400", 10.16mm Width), 44 Leads |
供应商设备包: | 50-TSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
25AA040T/SNRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 1MHZ 8SOIC |
|
IDT71V65802S100PFG8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
W25Q16CVZPJG TRWinbond Electronics Corporation |
IC FLASH 16MBIT SPI/QUAD 8WSON |
|
IS62WV5128DBLL-45TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 32TSOP I |
|
IDT71V2546S150PFI8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
CAT25010VE-GT3DSanyo Semiconductor/ON Semiconductor |
IC EEPROM 1KBIT SPI 10MHZ 8SOIC |
|
AT27LV256A-90TCRoving Networks / Microchip Technology |
IC EPROM 256KBIT PARALLEL 28TSOP |
|
CAT28C256L12Sanyo Semiconductor/ON Semiconductor |
IC EEPROM 256KBIT PARALLEL 28DIP |
|
IS46TR16128B-125KBLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 96TWBGA |
|
CY7C131E-25JXCTCypress Semiconductor |
IC SRAM 8KBIT PARALLEL 52PLCC |
|
IS61VPD51236A-250B3I-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165PBGA |
|
IDT71024S15YRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
71421SA25J8Renesas Electronics America |
IC SRAM 16KBIT PARALLEL 52PLCC |