类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Quad Port, Synchronous |
内存大小: | 18Mb (512K x 36) |
内存接口: | Parallel |
时钟频率: | 250 MHz |
写周期时间 - 字,页: | - |
访问时间: | 2.6 ns |
电压 - 电源: | 2.375V ~ 2.625V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 165-TBGA |
供应商设备包: | 165-PBGA (13x15) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IDT71024S15YRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
71421SA25J8Renesas Electronics America |
IC SRAM 16KBIT PARALLEL 52PLCC |
|
93LC76B-E/PRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 3MHZ 8DIP |
|
93C76BT-E/STRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 3MHZ 8TSSOP |
|
MT45W2MW16BGB-701 ITMicron Technology |
IC PSRAM 32MBIT PARALLEL 54VFBGA |
|
JS28F640J3F75EMicron Technology |
IC FLASH 64MBIT PARALLEL 56TSOP |
|
M28W640HSU70ZA6EMicron Technology |
IC FLASH 64MBIT PARALLEL 64TFBGA |
|
M29W200BB90N6STMicroelectronics |
IC FLASH 2MBIT PARALLEL 48TSOP |
|
IS43TR16128C-107MBLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 96TWBGA |
|
7142LA25J8Renesas Electronics America |
IC SRAM 16KBIT PARALLEL 52PLCC |
|
AT24C64AN-10SU-2.7-TRoving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 8SOIC |
|
AT93C46-10PC-1.8Roving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8DIP |
|
M95160-RMN6PSTMicroelectronics |
IC EEPROM 16KBIT SPI 10MHZ 8SO |