







MEMS OSC XO 166.6000MHZ LVCMOS
CONN EDGE DUAL FMALE 100POS .100
CONN D-SUB PLUG 25POS IDC
IC DRAM 4GBIT PARALLEL 96FBGA
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - DDR4 |
| 内存大小: | 4Gb (256M x 16) |
| 内存接口: | Parallel |
| 时钟频率: | 1.6 GHz |
| 写周期时间 - 字,页: | - |
| 访问时间: | - |
| 电压 - 电源: | 1.14V ~ 1.26V |
| 工作温度: | 0°C ~ 95°C (TC) |
| 安装类型: | Surface Mount |
| 包/箱: | 96-TFBGA |
| 供应商设备包: | 96-FBGA (9x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
RM3315-SNI-TAdesto Technologies |
IC EEPROM 128KBIT SPI 1MHZ 8SOIC |
|
|
AT93C66-10PI-2.5Roving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ 8DIP |
|
|
W632GG6MB-18Winbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 96VFBGA |
|
|
FM25640B-G2Cypress Semiconductor |
IC FRAM 64KBIT SPI 20MHZ 8SOIC |
|
|
W631GU8KB15I TRWinbond Electronics Corporation |
IC DRAM 1GBIT PARALLEL 78WBGA |
|
|
IDT71V416VS15YI8Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 44SOJ |
|
|
AS4C512M8D3L-12BINAlliance Memory, Inc. |
IC DRAM 4GBIT PARALLEL 78FBGA |
|
|
MT25QU256ABA8ESF-0SITMicron Technology |
IC FLASH 256MBIT SPI 133MHZ 16SO |
|
|
IS62WV10248DBLL-55MLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 8MBIT PARALLEL 48MINIBGA |
|
|
AT28C64B-15TIRoving Networks / Microchip Technology |
IC EEPROM 64KBIT PARALLEL 28TSOP |
|
|
M25PX64-VZM6TP TRMicron Technology |
IC FLSH 64MBIT SPI 75MHZ 24TPBGA |
|
|
STK22C48-NF25ICypress Semiconductor |
IC NVSRAM 16KBIT PARALLEL 28SOIC |
|
|
S34ML04G200BHV003SkyHigh Memory Limited |
IC FLASH 4G PARALLEL 63BGA |