类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, Asynchronous |
内存大小: | 144Kb (16K x 9) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 12ns |
访问时间: | 12 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 80-LQFP |
供应商设备包: | 80-TQFP (14x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MX25L12875FMI-10GMacronix |
IC FLSH 128MBIT SPI 104MHZ 16SOP |
|
CY14B256L-SZ45XITCypress Semiconductor |
IC NVSRAM 256KBIT PAR 32SOIC |
|
M95M01-RMW6GSTMicroelectronics |
IC EEPROM 1MBIT SPI 16MHZ 8SO |
|
AT24C64-10TI-2.5Roving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 8TSSOP |
|
CAT25C64LI-GSanyo Semiconductor/ON Semiconductor |
IC EEPROM 64KBIT SPI 10MHZ 8DIP |
|
7140LA55PF8Renesas Electronics America |
IC SRAM 8KBIT PARALLEL 64TQFP |
|
M29W400BT90N1Micron Technology |
IC FLASH 4MBIT PARALLEL 48TSOP |
|
DS1230AB-120Maxim Integrated |
IC NVSRAM 256KBIT PAR 28EDIP |
|
IDT6116LA45TPGIRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 24DIP |
|
MT29F4G01ADAGDWB-IT:G TRMicron Technology |
IC FLASH 4GBIT SPI 8UPDFN |
|
MT29C1G12MAADVAMD-5 IT TRMicron Technology |
IC FLASH RAM 1GBIT PAR 130VFBGA |
|
R1LV5256ESA-7SR#S0Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 28TSOP |
|
MT29F64G08CBHGBJ4-3R:G TRMicron Technology |
IC FLASH 64GBIT PARALLEL 132VBGA |