English
简体中文
HIGH-Q MLC CAPACITOR, C-SERIES,
IC SRAM 16KBIT PARALLEL 24DIP
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Asynchronous |
| 内存大小: | 16Kb (2K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 45ns |
| 访问时间: | 45 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Through Hole |
| 包/箱: | 24-DIP (0.300", 7.62mm) |
| 供应商设备包: | 24-PDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MT29F4G01ADAGDWB-IT:G TRMicron Technology |
IC FLASH 4GBIT SPI 8UPDFN |
|
MT29C1G12MAADVAMD-5 IT TRMicron Technology |
IC FLASH RAM 1GBIT PAR 130VFBGA |
|
R1LV5256ESA-7SR#S0Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 28TSOP |
|
MT29F64G08CBHGBJ4-3R:G TRMicron Technology |
IC FLASH 64GBIT PARALLEL 132VBGA |
|
AT27BV256-12JIRoving Networks / Microchip Technology |
IC EPROM 256KBIT PARALLEL 32PLCC |
|
IS42SM16800G-75BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 54TFBGA |
|
IS61NLP25618A-200TQIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
M48Z35Y-70MH1ESTMicroelectronics |
IC NVSRAM 256KBIT PARALLEL 28SOH |
|
IDT71V3556S133PFRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
DS1225AD-200Maxim Integrated |
IC NVSRAM 64KBIT PARALLEL 28EDIP |
|
MT40A256M16GE-062E IT:BMicron Technology |
IC DRAM 4GBIT PARALLEL 96FBGA |
|
FT25H16S-RTFremont Micro Devices |
IC FLASH 16MBIT SPI 120MHZ 8SOP |
|
AT29LV512-12TIRoving Networks / Microchip Technology |
IC FLASH 512KBIT PARALLEL 32TSOP |