类型 | 描述 |
---|---|
系列: | NoBL™ |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR |
内存大小: | 72Mb (2M x 36) |
内存接口: | Parallel |
时钟频率: | 167 MHz |
写周期时间 - 字,页: | - |
访问时间: | 3.4 ns |
电压 - 电源: | 3.135V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 165-LBGA |
供应商设备包: | 165-FBGA (15x17) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS46TR16640BL-125JBLA2ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 96TWBGA |
|
SST25WF080-75-4I-ZAERoving Networks / Microchip Technology |
IC FLASH 8MBIT SPI 75MHZ 8CSP |
|
S29GL128P10FAI012Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 64FBGA |
|
CY7C1354CV25-200AXCTCypress Semiconductor |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
AT27C080-90TCRoving Networks / Microchip Technology |
IC EPROM 8MBIT PARALLEL 32TSOP |
|
MT46V32M8P-6T:G TRMicron Technology |
IC DRAM 256MBIT PARALLEL 66TSOP |
|
PC28F256P30B85FMicron Technology |
IC FLASH 256MBIT PAR 64EASYBGA |
|
IS61DDB22M18-250M3ISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 36MBIT PARALLEL 165LFBGA |
|
IDT71V25761SA166BQRenesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
AS4C64M16D3L-12BANTRAlliance Memory, Inc. |
IC DRAM 1GBIT PARALLEL 96FBGA |
|
S29GL256P11FFIS40Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 64FBGA |
|
MT46H8M32LFB5-6 IT:HMicron Technology |
IC DRAM 256MBIT PARALLEL 90VFBGA |
|
7014S12J8Renesas Electronics America |
IC SRAM 36KBIT PARALLEL 52PLCC |