类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, Asynchronous |
内存大小: | 16Kb (2K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 100ns |
访问时间: | 100 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 52-LCC (J-Lead) |
供应商设备包: | 52-PLCC (19.13x19.13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AT27C010L-90JCRoving Networks / Microchip Technology |
IC EPROM 1MBIT PARALLEL 32PLCC |
|
MT46V64M8CY-5B L:JMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
25LC160DT-E/SN16KVAORoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 5MHZ 8SOIC |
|
70V25S35PF8Renesas Electronics America |
IC SRAM 128KBIT PARALLEL 100TQFP |
|
CAT25320LI-GSanyo Semiconductor/ON Semiconductor |
IC EEPROM 32KBIT SPI 10MHZ 8DIP |
|
N25Q256A13E1240EMicron Technology |
IC FLASH 256MBIT SPI 24TPBGA |
|
AT25160B-TH-TRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 8TSSOP |
|
IS42VM16160E-75BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 54TFBGA |
|
FT24C02A-5PR-TFremont Micro Devices |
IC EEPROM 2KBIT I2C TSOT23-5 |
|
24LC00/SRoving Networks / Microchip Technology |
IC EEPROM 128B I2C 400KHZ DIE |
|
MT29F16G08CBACBWP-12:C TRMicron Technology |
IC FLSH 16GBIT PARALLEL 48TSOP I |
|
IS43LD32320A-25BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 134TFBGA |
|
IDT71T75902S85BGGI8Renesas Electronics America |
IC SRAM 18MBIT PARALLEL 119PBGA |