English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 16Kb (2K x 8) |
| 内存接口: | SPI |
| 时钟频率: | 20 MHz |
| 写周期时间 - 字，页: | 5ms |
| 访问时间: | - |
| 电压 - 电源: | 1.8V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-TSSOP (0.173", 4.40mm Width) |
| 供应商设备包: | 8-TSSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IS42VM16160E-75BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 54TFBGA |
|
FT24C02A-5PR-TFremont Micro Devices |
IC EEPROM 2KBIT I2C TSOT23-5 |
|
24LC00/SRoving Networks / Microchip Technology |
IC EEPROM 128B I2C 400KHZ DIE |
|
MT29F16G08CBACBWP-12:C TRMicron Technology |
IC FLSH 16GBIT PARALLEL 48TSOP I |
|
IS43LD32320A-25BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 134TFBGA |
|
IDT71T75902S85BGGI8Renesas Electronics America |
IC SRAM 18MBIT PARALLEL 119PBGA |
|
AS4C8M16S-6TCNAlliance Memory, Inc. |
IC DRAM 128MBIT PAR 54TSOP II |
|
IDT71V65802S150BGG8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
MT42L128M32D2MH-25 IT:AMicron Technology |
IC DRAM 4GBIT PARALLEL 134FBGA |
|
MT48LC32M8A2P-75 IT:DMicron Technology |
IC DRAM 256MBIT PAR 54TSOP II |
|
IS43TR16128AL-125KBLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 96TWBGA |
|
MT44K16M36RB-093 IT:A TRMicron Technology |
IC DRAM 576MBIT PARALLEL 168BGA |
|
AT28C17E-15SCRoving Networks / Microchip Technology |
IC EEPROM 16KBIT PARALLEL 28SOIC |
