类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, Synchronous |
内存大小: | 256Kb (32K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | 12 ns |
电压 - 电源: | 3V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 100-LQFP |
供应商设备包: | 100-TQFP (14x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS43TR16640B-125JBL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 96TWBGA |
|
AT25128B-XPDGV-TRoving Networks / Microchip Technology |
IC EEPROM 128KBIT SPI 8TSSOP |
|
AT27LV256A-90RURoving Networks / Microchip Technology |
IC EPROM 256KBIT PARALLEL 28SOIC |
|
M29W800DT70N6EMicron Technology |
IC FLASH 8MBIT PARALLEL 48TSOP |
|
M29W800DB90N1Micron Technology |
IC FLASH 8MBIT PARALLEL 48TSOP |
|
IDT70824L35PFRenesas Electronics America |
IC RAM 64KBIT PARALLEL 80TQFP |
|
MT48LC4M16A2P-6A AIT:JMicron Technology |
IC DRAM 64MBIT PAR 54TSOP II |
|
AT24C02-10TI-1.8Roving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 8TSSOP |
|
M27C512-12B1STMicroelectronics |
IC EPROM 512KBIT PARALLEL 28DIP |
|
NP5Q064AE3ESFC0EMicron Technology |
IC PCM 64MBIT SPI 66MHZ 16SO W |
|
IS43TR16256AL-107MBL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 4GBIT PARALLEL 96TWBGA |
|
M48Z58Y-70MH1ESTMicroelectronics |
IC NVSRAM 64KBIT PARALLEL 28SOH |
|
IS63LV1024-8KL-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 1MBIT PARALLEL 32SOJ |