类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - DDR3 |
内存大小: | 2Gb (256M x 8) |
内存接口: | Parallel |
时钟频率: | 800 MHz |
写周期时间 - 字,页: | 15ns |
访问时间: | 20 ns |
电压 - 电源: | 1.425V ~ 1.575V |
工作温度: | -40°C ~ 95°C (TC) |
安装类型: | Surface Mount |
包/箱: | 78-VFBGA |
供应商设备包: | 78-FBGA (8x10.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
7130SA55PFRenesas Electronics America |
IC SRAM 8KBIT PARALLEL 64TQFP |
|
709099L7PF8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 100TQFP |
|
S40410161B1B1I013SkyHigh Memory Limited |
IC FLASH 16G PARALLEL 153VFBGA |
|
S29PL064J60BFI120LCypress Semiconductor |
IC FLASH 64MBIT PARALLEL 48FBGA |
|
M29W800DB70N6Micron Technology |
IC FLASH 8MBIT PARALLEL 48TSOP |
|
MT46V16M16FG-6:F TRMicron Technology |
IC DRAM 256MBIT PARALLEL 60FBGA |
|
MX29F200CBMI-70GMacronix |
IC FLASH 2MBIT PARALLEL 44SOP |
|
MT46V128M8TG-6T:AMicron Technology |
IC DRAM 1GBIT PARALLEL 66TSOP |
|
IDT71V25761SA166BGIRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
IDT71V424L12PHIRenesas Electronics America |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
MT48LC8M16A2P-6A AIT:LMicron Technology |
IC DRAM 128MBIT PAR 54TSOP II |
|
W632GU8KT-12Winbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 78VFBGA |
|
W25Q128FVBJQWinbond Electronics Corporation |
IC FLSH 128MBIT SPI/QUAD 24TFBGA |