English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Dual Port, Synchronous |
| 内存大小: | 256Kb (16K x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | - |
| 访问时间: | 12 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 100-LQFP |
| 供应商设备包: | 100-TQFP (14x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AT25010B-SSPD-TRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 5MHZ 8SOIC |
|
IS61NLP51236B-200B3IISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165TFBGA |
|
7008S20J8Renesas Electronics America |
IC SRAM 512KBIT PARALLEL 84PLCC |
|
MT29F4G16ABBDAH4:DMicron Technology |
IC FLASH 4GBIT PARALLEL 63VFBGA |
|
AT28C17E-15SIRoving Networks / Microchip Technology |
IC EEPROM 16KBIT PARALLEL 28SOIC |
|
IS25LQ016B-JMLE-TRISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 16MBIT SPI/QUAD 16SOIC |
|
IS29GL256S-10TFV010Cypress Semiconductor |
IC FLASH 256MBIT PARALLEL 56TSOP |
|
AT27BV512-15TCRoving Networks / Microchip Technology |
IC EPROM 512KBIT PARALLEL 28TSOP |
|
AT24C128B-TH-BRoving Networks / Microchip Technology |
IC EEPROM 128KBIT I2C 8TSSOP |
|
AS4C256M8D3-15BCNTRAlliance Memory, Inc. |
IC DRAM 2GBIT PARALLEL 78FBGA |
|
N25Q128A21BSF40F TRMicron Technology |
IC FLASH 128MBIT SPI 16SO W |
|
IS43QR16256A-083RBLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 4GBIT PARALLEL 96TWBGA |
|
R1LV1616RBG-5SI#B0Renesas Electronics America |
IC SRAM 16MBIT PARALLEL 48FBGA |
