类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 16Kb (2K x 8) |
内存接口: | I²C |
时钟频率: | 100 kHz |
写周期时间 - 字,页: | 10ms |
访问时间: | 3.5 µs |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Through Hole |
包/箱: | 8-DIP (0.300", 7.62mm) |
供应商设备包: | 8-DIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS43LR16800F-6BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 60TFBGA |
|
W9751G6KB25IWinbond Electronics Corporation |
IC DRAM 512MBIT PARALLEL 84WBGA |
|
AT29C020-90PIRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32DIP |
|
AT28HC64B-12JCRoving Networks / Microchip Technology |
IC EEPROM 64KBIT PARALLEL 32PLCC |
|
MT41K128M16JT-125 V:K TRMicron Technology |
IC DRAM 2GBIT PARALLEL 96FBGA |
|
NAND01GW3B2AZA6ESTMicroelectronics |
IC FLASH 1GBIT PARALLEL 63VFBGA |
|
STK14C88-NF45ICypress Semiconductor |
IC NVSRAM 256KBIT PAR 32SOIC |
|
IS42RM16160E-75BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 54TFBGA |
|
71V321S55PFRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 64TQFP |
|
S29AL008J70TFA020Cypress Semiconductor |
IC FLASH 8MBIT PARALLEL 48TSOP |
|
25LC040A-M/SNRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 10MHZ 8SOIC |
|
24FC256-I/PRoving Networks / Microchip Technology |
IC EEPROM 256KBIT I2C 1MHZ 8DIP |
|
AT29C512-90JCRoving Networks / Microchip Technology |
IC FLASH 512KBIT PARALLEL 32PLCC |