类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | NVSRAM |
技术: | NVSRAM (Non-Volatile SRAM) |
内存大小: | 256Kb (32K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 45ns |
访问时间: | 45 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 32-SOIC (0.295", 7.50mm Width) |
供应商设备包: | 32-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS42RM16160E-75BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 54TFBGA |
|
71V321S55PFRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 64TQFP |
|
S29AL008J70TFA020Cypress Semiconductor |
IC FLASH 8MBIT PARALLEL 48TSOP |
|
25LC040A-M/SNRoving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 10MHZ 8SOIC |
|
24FC256-I/PRoving Networks / Microchip Technology |
IC EEPROM 256KBIT I2C 1MHZ 8DIP |
|
AT29C512-90JCRoving Networks / Microchip Technology |
IC FLASH 512KBIT PARALLEL 32PLCC |
|
MT29F128G08CECGBJ4-37ES:G TRMicron Technology |
IC FLSH 128GBIT PARALLEL 132VBGA |
|
71321LA25PF8Renesas Electronics America |
IC SRAM 16KBIT PARALLEL 64TQFP |
|
70V261L55PF8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 100TQFP |
|
24FC515T-I/SMRoving Networks / Microchip Technology |
IC EEPROM 512KBIT I2C 1MHZ 8SOIJ |
|
AT29C040A-10PCRoving Networks / Microchip Technology |
IC FLASH 4MBIT PARALLEL 32DIP |
|
MT48LC32M16A2P-75 L:CMicron Technology |
IC DRAM 512MBIT PAR 54TSOP II |
|
709379L7PFRenesas Electronics America |
IC SRAM 576KBIT PARALLEL 100TQFP |