English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Dual Port, Asynchronous |
| 内存大小: | 16Kb (2K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 25ns |
| 访问时间: | 25 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 64-LQFP |
| 供应商设备包: | 64-TQFP (14x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
70V261L55PF8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 100TQFP |
|
24FC515T-I/SMRoving Networks / Microchip Technology |
IC EEPROM 512KBIT I2C 1MHZ 8SOIJ |
|
AT29C040A-10PCRoving Networks / Microchip Technology |
IC FLASH 4MBIT PARALLEL 32DIP |
|
MT48LC32M16A2P-75 L:CMicron Technology |
IC DRAM 512MBIT PAR 54TSOP II |
|
709379L7PFRenesas Electronics America |
IC SRAM 576KBIT PARALLEL 100TQFP |
|
MT29F256G08CMCABH2-12:AMicron Technology |
IC FLASH 256GBIT PAR 100TBGA |
|
CAT28F020G12Sanyo Semiconductor/ON Semiconductor |
IC FLASH 2MBIT PARALLEL 32PLCC |
|
IS43DR16128B-3DBLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 84TWBGA |
|
IS43TR16512AL-15HBLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 8GBIT PARALLEL 96LFBGA |
|
IS42S16100C1-7BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 16MBIT PARALLEL 60TFBGA |
|
CY7C199C-12VCCypress Semiconductor |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
71321SA35TFRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 64TQFP |
|
AT49F1024-70VIRoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 40VSOP |
