English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 512Kb (64K x 8) |
| 内存接口: | I²C |
| 时钟频率: | 1 MHz |
| 写周期时间 - 字，页: | 5ms |
| 访问时间: | 400 ns |
| 电压 - 电源: | 2.5V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-SOIC (0.209", 5.30mm Width) |
| 供应商设备包: | 8-SOIJ |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AT29C040A-10PCRoving Networks / Microchip Technology |
IC FLASH 4MBIT PARALLEL 32DIP |
|
MT48LC32M16A2P-75 L:CMicron Technology |
IC DRAM 512MBIT PAR 54TSOP II |
|
709379L7PFRenesas Electronics America |
IC SRAM 576KBIT PARALLEL 100TQFP |
|
MT29F256G08CMCABH2-12:AMicron Technology |
IC FLASH 256GBIT PAR 100TBGA |
|
CAT28F020G12Sanyo Semiconductor/ON Semiconductor |
IC FLASH 2MBIT PARALLEL 32PLCC |
|
IS43DR16128B-3DBLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 84TWBGA |
|
IS43TR16512AL-15HBLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 8GBIT PARALLEL 96LFBGA |
|
IS42S16100C1-7BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 16MBIT PARALLEL 60TFBGA |
|
CY7C199C-12VCCypress Semiconductor |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
71321SA35TFRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 64TQFP |
|
AT49F1024-70VIRoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 40VSOP |
|
M29W256GSH70ZS6EMicron Technology |
IC FLASH 256MBIT PARALLEL 64FBGA |
|
IDT71V25761YSA183BQRenesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
