类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR (ZBT) |
内存大小: | 4.5Mb (128K x 36) |
内存接口: | Parallel |
时钟频率: | 100 MHz |
写周期时间 - 字,页: | - |
访问时间: | 5 ns |
电压 - 电源: | 3.135V ~ 3.465V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 100-LQFP |
供应商设备包: | 100-TQFP (14x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IDT71P71604S200BQGRenesas Electronics America |
IC SRAM 18MBIT PARALLEL 165CABGA |
|
IS61WV102416BLL-10MIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 16MBIT PAR 48MINIBGA |
|
EDB1332BDBH-1DIT-F-DMicron Technology |
IC DRAM 1GBIT PARALLEL 134VFBGA |
|
S29AL016J55TFIR10ACypress Semiconductor |
IC FLASH 16MBIT PARALLEL 48TSOP |
|
W25Q32FVSSJQWinbond Electronics Corporation |
IC FLASH 32MBIT SPI/QUAD 8SOIC |
|
CYD36S36V18-167BBXICypress Semiconductor |
IC SRAM 36MBIT PARALLEL 256FBGA |
|
S29GL128P90FACR20Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 64FBGA |
|
MT46V32M16CY-5B AAT:J TRMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
MT48LC4M32B2P-6:GMicron Technology |
IC DRAM 128MBIT PAR 86TSOP II |
|
R1RP0416DGE-2PR#B0Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 44SOJ |
|
AT24C01A-10SU-1.8-TRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 400KHZ 8SOIC |
|
AT29BV020-15TU-TRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32TSOP |
|
STK14CA8-RF45ICypress Semiconductor |
IC NVSRAM 1MBIT PARALLEL 48SSOP |