English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 4Kb (512 x 8) |
| 内存接口: | I²C |
| 时钟频率: | 400 kHz |
| 写周期时间 - 字，页: | 5ms |
| 访问时间: | 900 ns |
| 电压 - 电源: | 2.5V ~ 5.5V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Through Hole |
| 包/箱: | 8-DIP (0.300", 7.62mm) |
| 供应商设备包: | 8-DIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
JS28F256M29EWLDMicron Technology |
IC FLASH 256MBIT PARALLEL 56TSOP |
|
AT49BV002NT-90JCRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32PLCC |
|
AS4C4M16D1-5TCNTRAlliance Memory, Inc. |
IC DRAM 64MBIT PAR 66TSOP II |
|
NAND01GR3B2CZA6EMicron Technology |
IC FLASH 1GBIT PARALLEL 63VFBGA |
|
MT29F128G08AMCABH2-10ITZ:AMicron Technology |
IC FLASH 128GBIT PAR 100TBGA |
|
IS46TR16640CL-125JBLA25ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 96TWBGA |
|
CAT28F010H90Sanyo Semiconductor/ON Semiconductor |
IC FLASH 1MBIT PARALLEL 32TSOP |
|
IDT71V416VS10PHRenesas Electronics America |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
AT49F001AN-55TURoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32TSOP |
|
IS45S32400E-7BLA2ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 90TFBGA |
|
IDT71V416YS20PH8Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
AT49F040-12TIRoving Networks / Microchip Technology |
IC FLASH 4MBIT PARALLEL 32TSOP |
|
70V9079L12PFIRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 100TQFP |
