English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Dual Port, Synchronous |
| 内存大小: | 256Kb (32K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | - |
| 访问时间: | 12 ns |
| 电压 - 电源: | 3V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 100-LQFP |
| 供应商设备包: | 100-TQFP (14x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IS42S16160D-6BL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 54TFBGA |
|
S29GL128P90DFIR10Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 64FBGA |
|
IDT71024S15TYIRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
CYK512K16SCAU-70BAXICypress Semiconductor |
IC PSRAM 8MBIT PARALLEL 48FBGA |
|
AT27LV520-90SCRoving Networks / Microchip Technology |
IC EPROM 512KBIT PARALLEL 20SOIC |
|
MT47H64M16HR-25E AIT:HMicron Technology |
IC DRAM 1GBIT PARALLEL 84FBGA |
|
IS42S32200C1-7BIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PARALLEL 90BGA |
|
IDT71P71604S250BQ8Renesas Electronics America |
IC SRAM 18MBIT PARALLEL 165CABGA |
|
M58LW032C90ZA1STMicroelectronics |
IC FLASH 32MBIT PARALLEL 64TBGA |
|
SST25PF040B-80-4C-S2AE-TRoving Networks / Microchip Technology |
IC FLASH 4MBIT SPI 80MHZ 8SOIC |
|
70261S25PFIRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 100TQFP |
|
AT29C512-90TURoving Networks / Microchip Technology |
IC FLASH 512KBIT PARALLEL 32TSOP |
|
FM27C256V150Sanyo Semiconductor/ON Semiconductor |
IC EPROM 256KBIT PARALLEL 32PLCC |
