English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | EPROM |
| 技术: | EPROM - OTP |
| 内存大小: | 256Kb (32K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | - |
| 访问时间: | 150 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 32-LCC (J-Lead) |
| 供应商设备包: | 32-PLCC (14x11.46) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
M95320-DRMN6TPSTMicroelectronics |
IC EEPROM 32KBIT SPI 20MHZ 8SO |
|
M58LW032D90ZA6STMicroelectronics |
IC FLASH 32MBIT PARALLEL 64TBGA |
|
MT41K256M16RE-15E IT:DMicron Technology |
IC DRAM 4GBIT PARALLEL 96FBGA |
|
MT40A1G8WE-075E:B TRMicron Technology |
IC DRAM 8GBIT PARALLEL 78FBGA |
|
70V26S55J8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 84PLCC |
|
AT27C512R-55RIRoving Networks / Microchip Technology |
IC EPROM 512KBIT PARALLEL 28SOIC |
|
S29GL256P11TFI020DCypress Semiconductor |
IC FLASH 256MBIT PARALLEL 56TSOP |
|
IDT71V424L10PHRenesas Electronics America |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
70V9389L7PRF8Renesas Electronics America |
IC SRAM 1.125MBIT PAR 128TQFP |
|
GD5F1GQ4RF9IGYGigaDevice |
IC FLASH 1GBIT SPI/QUAD I/O 8LGA |
|
IS42S16100C1-6TISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 16MBIT PAR 50TSOP II |
|
AT21CS01-STUM12-TRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 125KHZ SOT23 |
|
PC28F320J3D75D TRMicron Technology |
IC FLASH 32MBIT PAR 64EASYBGA |
