类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - Mobile LPDDR |
内存大小: | 128Mb (8M x 16) |
内存接口: | Parallel |
时钟频率: | 166 MHz |
写周期时间 - 字,页: | 15ns |
访问时间: | 5.5 ns |
电压 - 电源: | 1.7V ~ 1.95V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 60-TFBGA |
供应商设备包: | 60-TFBGA (8x10) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS46TR16640CL-125JBLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 96TWBGA |
|
IS42RM32800D-75BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PARALLEL 90TFBGA |
|
FM24V01-GTRCypress Semiconductor |
IC FRAM 128KBIT I2C 3.4MHZ 8SOIC |
|
24LC512-E/SN16KVAORoving Networks / Microchip Technology |
IC EEPROM 512KBIT I2C 8SOIC |
|
CY14B104NA-BA25ITCypress Semiconductor |
IC NVSRAM 4MBIT PARALLEL 48FBGA |
|
AT27BV512-90RIRoving Networks / Microchip Technology |
IC EPROM 512KBIT PARALLEL 28SOIC |
|
MT53D384M32D2DS-053 XT:CMicron Technology |
IC DRAM 12GBIT 1866MHZ 200WFBGA |
|
71321SA25JRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 52PLCC |
|
IDT7164LS20YRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 28SOJ |
|
DS1220AD-200INDMaxim Integrated |
IC NVSRAM 16KBIT PARALLEL 24EDIP |
|
AS4C64M16D3-12BCNTRAlliance Memory, Inc. |
IC DRAM 1GBIT PARALLEL 96FBGA |
|
MT46V16M16TG-5B:F TRMicron Technology |
IC DRAM 256MBIT PARALLEL 66TSOP |
|
7038L20PFRenesas Electronics America |
IC SRAM 1.125MBIT PAR 100TQFP |