English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | NVSRAM |
| 技术: | NVSRAM (Non-Volatile SRAM) |
| 内存大小: | 256Kb (32K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 45ns |
| 访问时间: | 45 ns |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 48-BSSOP (0.295", 7.50mm Width) |
| 供应商设备包: | 48-SSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MT46V64M4TG-75:GMicron Technology |
IC DRAM 256MBIT PARALLEL 66TSOP |
|
RMLV0808BGBG-4S2#KC0Renesas Electronics America |
IC SRAM 8MBIT PARALLEL 48TFBGA |
|
7133LA55PFRenesas Electronics America |
IC SRAM 32KBIT PARALLEL 100TQFP |
|
W948D6KBHX6EWinbond Electronics Corporation |
IC DRAM 256MBIT PARALLEL 60VFBGA |
|
N25Q064A13EF640F TRMicron Technology |
IC FLSH 64MBIT SPI 108MHZ 8VDFPN |
|
W632GU6MB12IWinbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 96VFBGA |
|
71342LA45JRenesas Electronics America |
IC SRAM 32KBIT PARALLEL 52PLCC |
|
IS45S32800D-7TLA1-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 86TSOP II |
|
IDT71V432S7PFGI8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 100TQFP |
|
7026L25JRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 84PLCC |
|
AT29C512-12JIRoving Networks / Microchip Technology |
IC FLASH 512KBIT PARALLEL 32PLCC |
|
S29GL512P10FFI010Cypress Semiconductor |
IC FLASH 512MBIT PARALLEL 64FBGA |
|
709099L7PFRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 100TQFP |
