English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Dual Port, Asynchronous |
| 内存大小: | 16Kb (2K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 25ns |
| 访问时间: | 25 ns |
| 电压 - 电源: | 3V ~ 3.6V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 52-LCC (J-Lead) |
| 供应商设备包: | 52-PLCC (19.13x19.13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
93C76AT-E/SNRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 3MHZ 8SOIC |
|
AT93C46-10PI-2.5Roving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8DIP |
|
MT46H8M32LFB5-6:A TRMicron Technology |
IC DRAM 256MBIT PARALLEL 90VFBGA |
|
70V06L55PFRenesas Electronics America |
IC SRAM 128KBIT PARALLEL 64TQFP |
|
AS4C128M8D3L-12BCNAlliance Memory, Inc. |
IC DRAM 1GBIT PARALLEL 78FBGA |
|
MT48V8M32LFF5-8 IT TRMicron Technology |
IC DRAM 256MBIT PARALLEL 90VFBGA |
|
CY7C1021B-12VXCCypress Semiconductor |
IC SRAM 1MBIT PARALLEL 44SOJ |
|
FT24C256A-UTR-BFremont Micro Devices |
IC EEPROM 256KBIT I2C 8TSSOP |
|
93AA86B-I/MSRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 3MHZ 8MSOP |
|
IDT71V65602S133BQ8Renesas Electronics America |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
CY7C1550V18-375BZCCypress Semiconductor |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
CY7C12701KV18-400BZXCCypress Semiconductor |
IC SRAM 36MBIT PARALLEL 165FBGA |
|
MT48LC8M16A2TG-7E IT:G TRMicron Technology |
IC DRAM 128MBIT PAR 54TSOP II |
