English
简体中文
IC OPAMP ZERO-DRIFT 1CIRC 8TMSOP
IC SRAM 18MBIT PARALLEL 100TQFP
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | NoBL™ |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Synchronous, SDR |
| 内存大小: | 18Mb (1M x 18) |
| 内存接口: | Parallel |
| 时钟频率: | 167 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 3.4 ns |
| 电压 - 电源: | 3.135V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 100-LQFP |
| 供应商设备包: | 100-TQFP (14x20) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
70V261S35PFRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 100TQFP |
|
AS4C512M8D3L-12BCNTRAlliance Memory, Inc. |
IC DRAM 4GBIT PARALLEL 78FBGA |
|
AT24C01A-10PU-1.8Roving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 400KHZ 8DIP |
|
CY62126ESL-45ZSXACypress Semiconductor |
IC SRAM 1MBIT PARALLEL 44TSOP II |
|
MT48LC32M8A2P-7E:DMicron Technology |
IC DRAM 256MBIT PAR 54TSOP II |
|
MT46V64M8P-5B:F TRMicron Technology |
IC DRAM 512MBIT PARALLEL 66TSOP |
|
AT45DB081D-SUAdesto Technologies |
IC FLASH 8MBIT SPI 66MHZ 8SOIC |
|
70V9269L12PRFI8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 128TQFP |
|
MT29F4G08ABAFAWP-AATES:F TRMicron Technology |
IC FLASH 4GBIT PARALLEL 48TSOP I |
|
IS46TR16640BL-125KBLA2ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 96TWBGA |
|
MT48LC8M16A2B4-75:G TRMicron Technology |
IC DRAM 128MBIT PARALLEL 54VFBGA |
|
S34ML02G100BHA000SkyHigh Memory Limited |
IC FLASH 2G PARALLEL 63BGA |
|
IDT71V2556S166PF8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |