类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q100 |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NAND |
内存大小: | 4Gb (512M x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 105°C (TC) |
安装类型: | Surface Mount |
包/箱: | 48-TFSOP (0.724", 18.40mm Width) |
供应商设备包: | 48-TSOP I |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS46TR16640BL-125KBLA2ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 96TWBGA |
|
MT48LC8M16A2B4-75:G TRMicron Technology |
IC DRAM 128MBIT PARALLEL 54VFBGA |
|
S34ML02G100BHA000SkyHigh Memory Limited |
IC FLASH 2G PARALLEL 63BGA |
|
IDT71V2556S166PF8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
IS46TR16640A-15GBLA2-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 96TWBGA |
|
BR24G32-3ROHM Semiconductor |
IC EEPROM 32KBIT I2C 400KHZ 8DIP |
|
7132LA100J8Renesas Electronics America |
IC SRAM 16KBIT PARALLEL 52PLCC |
|
MT25QU256ABA8E14-1SITMicron Technology |
IC FLASH 256MBIT SPI 24TPBGA |
|
IS42S32200C1-7BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PARALLEL 90BGA |
|
MT29F2G16ABAEAWP:EMicron Technology |
IC FLASH 2GBIT PARALLEL 48TSOP I |
|
M29W320EB70N6EMicron Technology |
IC FLASH 32MBIT PARALLEL 48TSOP |
|
AT93C86-10SC-2.7Roving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 2MHZ 8SOIC |
|
SST25PF080B-80-4C-S2AERoving Networks / Microchip Technology |
IC FLASH 8MBIT SPI 80MHZ 8SOIC |