类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, Asynchronous |
内存大小: | 16Kb (2K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 35ns |
访问时间: | 35 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 52-LCC (J-Lead) |
供应商设备包: | 52-PLCC (19.13x19.13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT41K128M16JT-125 M:KMicron Technology |
IC DRAM 2GBIT PARALLEL 96FBGA |
|
AT24C128N-10SI-2.7Roving Networks / Microchip Technology |
IC EEPROM 128KBIT I2C 1MHZ 8SOIC |
|
S29PL064J70BAW120ACypress Semiconductor |
IC FLASH 64MBIT PARALLEL 48FBGA |
|
S29CD032J0PQFM010Cypress Semiconductor |
IC FLASH 32MBIT PARALLEL 80PQFP |
|
AT25010A-10PU-1.8Roving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 20MHZ 8DIP |
|
IS45S16800E-7TLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 54TSOP II |
|
93C76A-I/PRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 3MHZ 8DIP |
|
AS4C16M16S-6TANAlliance Memory, Inc. |
IC DRAM 256MBIT PAR 54TSOP II |
|
AS4C16M16S-6BINAlliance Memory, Inc. |
IC DRAM 256MBIT PARALLEL 54TFBGA |
|
CY7C1049D-10VXICypress Semiconductor |
IC SRAM 4MBIT PARALLEL 36SOJ |
|
W29GL128CH9TWinbond Electronics Corporation |
IC FLASH 128MBIT PARALLEL 56TSOP |
|
CY7C199C-12VXICypress Semiconductor |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
N25Q256A83E1241EMicron Technology |
IC FLASH 256MBIT SPI 24TPBGA |