类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 1Kb (128 x 8) |
内存接口: | SPI |
时钟频率: | 20 MHz |
写周期时间 - 字,页: | 5ms |
访问时间: | - |
电压 - 电源: | 1.8V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Through Hole |
包/箱: | 8-DIP (0.300", 7.62mm) |
供应商设备包: | 8-PDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS45S16800E-7TLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 54TSOP II |
|
93C76A-I/PRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 3MHZ 8DIP |
|
AS4C16M16S-6TANAlliance Memory, Inc. |
IC DRAM 256MBIT PAR 54TSOP II |
|
AS4C16M16S-6BINAlliance Memory, Inc. |
IC DRAM 256MBIT PARALLEL 54TFBGA |
|
CY7C1049D-10VXICypress Semiconductor |
IC SRAM 4MBIT PARALLEL 36SOJ |
|
W29GL128CH9TWinbond Electronics Corporation |
IC FLASH 128MBIT PARALLEL 56TSOP |
|
CY7C199C-12VXICypress Semiconductor |
IC SRAM 256KBIT PARALLEL 28SOJ |
|
N25Q256A83E1241EMicron Technology |
IC FLASH 256MBIT SPI 24TPBGA |
|
S25FL129P0XNFV003Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 8WSON |
|
MT53B1DADS-DCMicron Technology |
IC DRAM 200WFBGA |
|
CY14ME064Q2A-SXITCypress Semiconductor |
IC NVSRAM 64KBIT SPI 40MHZ 8SOIC |
|
70V9289L12PRFIRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 128TQFP |
|
AT27LV520-70XIRoving Networks / Microchip Technology |
IC EPROM 512KBIT PAR 20TSSOP |