English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - Mobile LPDDR4 |
| 内存大小: | - |
| 内存接口: | - |
| 时钟频率: | - |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | - |
| 工作温度: | - |
| 安装类型: | Surface Mount |
| 包/箱: | 200-WFBGA |
| 供应商设备包: | 200-WFBGA (10x14.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CY14ME064Q2A-SXITCypress Semiconductor |
IC NVSRAM 64KBIT SPI 40MHZ 8SOIC |
|
70V9289L12PRFIRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 128TQFP |
|
AT27LV520-70XIRoving Networks / Microchip Technology |
IC EPROM 512KBIT PAR 20TSSOP |
|
W25Q80BWSSIG TRWinbond Electronics Corporation |
IC FLASH 8MBIT SPI 80MHZ 8SOIC |
|
MT48LC4M32LFB5-8 XT:GMicron Technology |
IC DRAM 128MBIT PARALLEL 90VFBGA |
|
70V9269S15PRFIRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 128TQFP |
|
W632GG6MB-12Winbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 96VFBGA |
|
MT46V64M8CV-5B IT:J TRMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
IDT71V3557S80PFRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
IDT71V3558S200BG8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
S34MS01G100BHB003SkyHigh Memory Limited |
IC FLASH 1G PARALLEL 63BGA |
|
AT25160A-10TU-2.7-TRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 8TSSOP |
|
CY7C109B-20VCCypress Semiconductor |
IC SRAM 1MBIT PARALLEL 32SOJ |
