English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Dual Port, Asynchronous |
| 内存大小: | 64Kb (4K x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 25ns |
| 访问时间: | 25 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 100-LQFP |
| 供应商设备包: | 100-TQFP (14x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IS43DR16128A-3DBLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 2GBIT PARALLEL 84LFBGA |
|
MT44K32M18RB-093E:AMicron Technology |
IC DRAM 576MBIT PARALLEL 168BGA |
|
IS42S16100E-5TLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 16MBIT PAR 50TSOP II |
|
AT24C08N-10SIRoving Networks / Microchip Technology |
IC EEPROM 8KBIT I2C 400KHZ 8SOIC |
|
M29DW323DT70ZE6F TRMicron Technology |
IC FLASH 32MBIT PARALLEL 48TFBGA |
|
MT48LC8M16LFB4-10 IT:G TRMicron Technology |
IC DRAM 128MBIT PARALLEL 54VFBGA |
|
IS61LPD51236A-250B3ISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165PBGA |
|
R1EX25008ATA00I#S0Renesas Electronics America |
IC EEPROM 8KBIT SPI 5MHZ 8TSSOP |
|
MT29F128G08CECABH1-10Z:AMicron Technology |
IC FLASH 128GBIT PAR 100VBGA |
|
IS65WV12816BLL-55TA3ISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 2MBIT PARALLEL 44TSOP II |
|
M29W800DB70ZE6F TRMicron Technology |
IC FLASH 8MBIT PARALLEL 48TFBGA |
|
EDY4016AABG-GX-F-DMicron Technology |
IC DRAM 4GBIT PARALLEL 96FBGA |
|
AT49BV160DT-70CURoving Networks / Microchip Technology |
IC FLASH 16MBIT PARALLEL 46CBGA |
