类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q100 |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - DDR3 |
内存大小: | 2Gb (128M x 16) |
内存接口: | Parallel |
时钟频率: | 1.066 GHz |
写周期时间 - 字,页: | 15ns |
访问时间: | 20 ns |
电压 - 电源: | 1.425V ~ 1.575V |
工作温度: | -40°C ~ 95°C (TC) |
安装类型: | Surface Mount |
包/箱: | 96-TFBGA |
供应商设备包: | 96-TWBGA (9x13) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
93C76B-I/MSRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 3MHZ 8MSOP |
|
S29GL032N90FFIS32Cypress Semiconductor |
IC FLASH 32MBIT PARALLEL 64FBGA |
|
IDT71V25761YSA183BG8Renesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
IS42S16800F-7BI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 54TFBGA |
|
IS43DR81280B-25EBL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 60TWBGA |
|
AT24C32CN-SH-TRoving Networks / Microchip Technology |
IC EEPROM 32KBIT I2C 1MHZ 8SOIC |
|
24FC02-E/SNRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 1MHZ 8SOIC |
|
MT47H64M8B6-5E IT:D TRMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
AT27BV512-90RCRoving Networks / Microchip Technology |
IC EPROM 512KBIT PARALLEL 28SOIC |
|
IDT7164L20YRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 28SOJ |
|
IS42S16800D-75EBLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 54MINIBGA |
|
MT49H8M36SJ-25 IT:B TRMicron Technology |
IC DRAM 288MBIT PARALLEL 144FBGA |
|
70V09L15PF8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 100TQFP |