类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Synchronous, SDR |
内存大小: | 18Mb (512K x 36) |
内存接口: | Parallel |
时钟频率: | 250 MHz |
写周期时间 - 字,页: | - |
访问时间: | 2.6 ns |
电压 - 电源: | 3.135V ~ 3.465V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 100-LQFP |
供应商设备包: | 100-TQFP (14x20) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
MT44K32M18RB-107:A TRMicron Technology |
IC DRAM 576MBIT PARALLEL 168BGA |
![]() |
AT28C64-12SCRoving Networks / Microchip Technology |
IC EEPROM 64KBIT PARALLEL 28SOIC |
![]() |
IS43R83200B-5TL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 256MBIT PAR 66TSOP II |
![]() |
71421LA25JI8Renesas Electronics America |
IC SRAM 16KBIT PARALLEL 52PLCC |
![]() |
AT25128T2-10TIRoving Networks / Microchip Technology |
IC EEPROM 128KBIT SPI 20TSSOP |
![]() |
IDT71V3577S80PFIRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
![]() |
IS61DDB21M36-275M3ISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 36MBIT PAR 165LFBGA |
![]() |
IS42SM32200K-75BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PARALLEL 90TFBGA |
![]() |
S29GL064N90DFI020Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 64FBGA |
![]() |
AT93C46W-10SIRoving Networks / Microchip Technology |
IC EEPROM 1KBIT SPI 2MHZ 8SOIC |
![]() |
W9464G6JH-5IWinbond Electronics Corporation |
IC DRAM 64MBIT PAR 66TSOP II |
![]() |
W631GU6KB15I TRWinbond Electronics Corporation |
IC DRAM 1GBIT PARALLEL 96WBGA |
![]() |
7130LA35TF8Renesas Electronics America |
IC SRAM 8KBIT PARALLEL 64TQFP |