类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 1Kb (128 x 8, 64 x 16) |
内存接口: | SPI |
时钟频率: | 2 MHz |
写周期时间 - 字,页: | 10ms |
访问时间: | - |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
W9464G6JH-5IWinbond Electronics Corporation |
IC DRAM 64MBIT PAR 66TSOP II |
![]() |
W631GU6KB15I TRWinbond Electronics Corporation |
IC DRAM 1GBIT PARALLEL 96WBGA |
![]() |
7130LA35TF8Renesas Electronics America |
IC SRAM 8KBIT PARALLEL 64TQFP |
![]() |
MT53B128M32D1NP-062 AAT:AMicron Technology |
IC DRAM 4GBIT 1600MHZ 200WFBGA |
![]() |
IS42S32200C1-7T-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PAR 86TSOP II |
![]() |
709089S15PFRenesas Electronics America |
IC SRAM 512KBIT PARALLEL 100TQFP |
![]() |
7006L55PFI8Renesas Electronics America |
IC SRAM 128KBIT PARALLEL 64TQFP |
![]() |
IS61WV204816ALL-10TLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 32MBIT PARALLEL 48TSOP I |
![]() |
70V25S25PF8Renesas Electronics America |
IC SRAM 128KBIT PARALLEL 100TQFP |
![]() |
IS42S16320B-75ETLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PAR 54TSOP II |
![]() |
NM27C240V120Sanyo Semiconductor/ON Semiconductor |
IC EPROM 4MBIT PARALLEL 44PLCC |
![]() |
MT45V512KW16PEGA-70 WT TRMicron Technology |
IC PSRAM 8MBIT PARALLEL 48VFBGA |
![]() |
NAND512W3A2BZA6ESTMicroelectronics |
IC FLSH 512MBIT PARALLEL 63VFBGA |