English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NOR |
| 内存大小: | 4Mb (512K x 8) |
| 内存接口: | SPI |
| 时钟频率: | 75 MHz |
| 写周期时间 - 字，页: | 15ms, 3ms |
| 访问时间: | - |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | -40°C ~ 125°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 8-SOIC (0.154", 3.90mm Width) |
| 供应商设备包: | 8-SO |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
AT24C01-10PCRoving Networks / Microchip Technology |
IC EEPROM 1KBIT I2C 400KHZ 8DIP |
|
DS1245Y-85Maxim Integrated |
IC NVSRAM 1MBIT PARALLEL 32EDIP |
|
AT24C02AN-10SI-2.7-TRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ 8SOIC |
|
IDT71T75902S75BGGI8Renesas Electronics America |
IC SRAM 18MBIT PARALLEL 119PBGA |
|
MT46V32M4TG-5B:DMicron Technology |
IC DRAM 128MBIT PARALLEL 66TSOP |
|
MT44K16M36RB-093E:AMicron Technology |
IC DRAM 576MBIT PARALLEL 168BGA |
|
IS61LPD102418A-250B3I-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 165PBGA |
|
R1RW0416DGE-2PR#B1Renesas Electronics America |
IC SRAM 4MBIT PARALLEL 44SOJ |
|
IDT71V124SA12YIRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
AT27BV020-12JIRoving Networks / Microchip Technology |
IC EPROM 2MBIT PARALLEL 32PLCC |
|
W25Q64FVSSIPWinbond Electronics Corporation |
IC FLASH 64MBIT SPI/QUAD 8SOIC |
|
IDT71V2546S150PFIRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
IDT71V3557S80BQ8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
