English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM |
| 内存大小: | 4Mb (256K x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 12ns |
| 访问时间: | 12 ns |
| 电压 - 电源: | 3V ~ 3.6V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 44-BSOJ (0.400", 10.16mm Width) |
| 供应商设备包: | 44-SOJ |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IDT71V124SA12YIRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 32SOJ |
|
AT27BV020-12JIRoving Networks / Microchip Technology |
IC EPROM 2MBIT PARALLEL 32PLCC |
|
W25Q64FVSSIPWinbond Electronics Corporation |
IC FLASH 64MBIT SPI/QUAD 8SOIC |
|
IDT71V2546S150PFIRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
IDT71V3557S80BQ8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
IDT71V67703S80PFRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 100TQFP |
|
N25Q128A11B1240F TRMicron Technology |
IC FLASH 128MBIT SPI 24TPBGA |
|
AT28C256F-15SCRoving Networks / Microchip Technology |
IC EEPROM 256KBIT PAR 28SOIC |
|
W25Q64JVZEJMWinbond Electronics Corporation |
IC FLASH 64MBIT SPI/QUAD 8WSON |
|
IS61WV204816ALL-10TLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 32MBIT PARALLEL 48TSOP I |
|
AT25256AN-10SI-1.8-TRoving Networks / Microchip Technology |
IC EEPROM 256KBIT SPI 8SOIC |
|
AT28C010-15PURoving Networks / Microchip Technology |
IC EEPROM 1MBIT PARALLEL 32DIP |
|
IS49NLC93200-33BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 288MBIT PAR 144FCBGA |
