类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 1Mb (128K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 10ms |
访问时间: | 150 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TC) |
安装类型: | Through Hole |
包/箱: | 32-DIP (0.600", 15.24mm) |
供应商设备包: | 32-PDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS49NLC93200-33BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 288MBIT PAR 144FCBGA |
|
93LC86A-E/PRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 3MHZ 8DIP |
|
CY7C1512SV18-200BZICypress Semiconductor |
IC SRAM 72MBIT PARALLEL 165FBGA |
|
AT28BV64B-20TCRoving Networks / Microchip Technology |
IC EEPROM 64KBIT PARALLEL 28TSOP |
|
M29F400BB70N1Micron Technology |
IC FLASH 4MBIT PARALLEL 48TSOP |
|
IS61VPS102436A-166TQL-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 36MBIT PARALLEL 100LQFP |
|
IDT71V67602S166BGRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 119PBGA |
|
7025L55J8Renesas Electronics America |
IC SRAM 128KBIT PARALLEL 84PLCC |
|
N25Q016A11EF640F TRMicron Technology |
IC FLASH 16MBIT SPI 108MHZ 8DFN |
|
IS42S32200C1-7TI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PAR 86TSOP II |
|
CYDD18S72V18-167BBXICypress Semiconductor |
IC SRAM 18MBIT PARALLEL 256FBGA |
|
AT93C66-10PC-2.7Roving Networks / Microchip Technology |
IC EEPROM 4KBIT SPI 2MHZ 8DIP |
|
IS43LR32200B-6BLIISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 64MBIT PARALLEL 90TFBGA |