English
简体中文
XTAL OSC VCXO 125.0000MHZ LVPECL
CONN RCPT MALE 18POS GOLD CRIMP
SZ 1 CR PUR RED SAB RD AR; WD HD
IC SRAM 4.5MBIT PARALLEL 119PBGA
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Synchronous, SDR |
| 内存大小: | 4.5Mb (256K x 18) |
| 内存接口: | Parallel |
| 时钟频率: | 200 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 3.1 ns |
| 电压 - 电源: | 3.135V ~ 3.465V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 119-BBGA |
| 供应商设备包: | 119-PBGA (14x22) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
IDT71P71604S200BQRenesas Electronics America |
IC SRAM 18MBIT PARALLEL 165CABGA |
|
IDT71V35761SA200BQ8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 165CABGA |
|
70V9269S12PRFI8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 128TQFP |
|
CY7C1061AV33-10BAXITCypress Semiconductor |
IC SRAM 16MBIT PARALLEL 60FBGA |
|
PC28F640P33TF60AMicron Technology |
IC FLASH 64MBIT PAR 64EASYBGA |
|
MT47H32M16BN-3:D TRMicron Technology |
IC DRAM 512MBIT PARALLEL 84FBGA |
|
70T659S12DRRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 208PQFP |
|
IS42S16800D-75EBL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PAR 54MINIBGA |
|
AT27LV256A-55RIRoving Networks / Microchip Technology |
IC EPROM 256KBIT PARALLEL 28SOIC |
|
W632GG6KB-12 TRWinbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 96WBGA |
|
MT46H64M16LFCK-5:A TRMicron Technology |
IC DRAM 1GBIT PARALLEL 60VFBGA |
|
IDT71T75702S80BGI8Renesas Electronics America |
IC SRAM 18MBIT PARALLEL 119PBGA |
|
CY7C1061AV33-12ZXICypress Semiconductor |
IC SRAM 16MBIT PAR 54TSOP II |