







 
                            CRYSTAL 25.000625MHZ 12PF SMD
 
                            CRYSTAL 20.0000MHZ 11PF SMD
 
                            XTAL OSC VCXO 35.3280MHZ LVPECL
 
                            IC DRAM 288MBIT PAR 144FCBGA
| 类型 | 描述 | 
|---|---|
| 系列: | - | 
| 包裹: | Tray | 
| 零件状态: | Obsolete | 
| 内存类型: | Volatile | 
| 内存格式: | DRAM | 
| 技术: | DRAM | 
| 内存大小: | 288Mb (32M x 9) | 
| 内存接口: | Parallel | 
| 时钟频率: | 300 MHz | 
| 写周期时间 - 字,页: | - | 
| 访问时间: | 20 ns | 
| 电压 - 电源: | 1.7V ~ 1.9V | 
| 工作温度: | -40°C ~ 85°C (TA) | 
| 安装类型: | Surface Mount | 
| 包/箱: | 144-TFBGA | 
| 供应商设备包: | 144-FCBGA (11x18.5) | 
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|   | MT46V32M16P-6T L:FMicron Technology | IC DRAM 512MBIT PARALLEL 66TSOP | 
|   | IDT71V25761SA183BQIRenesas Electronics America | IC SRAM 4.5MBIT PAR 165CABGA | 
|   | 70V631S12PRFI8Renesas Electronics America | IC SRAM 4.5MBIT PARALLEL 128TQFP | 
|   | IS45S16320B-7TLA1-TRISSI (Integrated Silicon Solution, Inc.) | IC DRAM 512MBIT PAR 54TSOP II | 
|   | 93LC86A-I/MSRoving Networks / Microchip Technology | IC EEPROM 16KBIT SPI 3MHZ 8MSOP | 
|   | SST25PF040CT-40V/NP18GVAORoving Networks / Microchip Technology | IC FLASH 4MBIT SPI 40MHZ 8USON | 
|   | IS61QDB42M18-250M3LISSI (Integrated Silicon Solution, Inc.) | IC SRAM 36MBIT PARALLEL 165LFBGA | 
|   | W25Q64FVSFIGWinbond Electronics Corporation | IC FLASH 64MBIT SPI/QUAD 16SOIC | 
|   | M25PE16-VMP6GMicron Technology | IC FLASH 16MBIT SPI 75MHZ 8VDFPN | 
|   | W632GG8KB-09Winbond Electronics Corporation | IC DRAM 2GBIT PARALLEL 78WBGA | 
|   | PC28F640P30T85B TRMicron Technology | IC FLASH 64MBIT PAR 64EASYBGA | 
|   | AT25080B-SSPDGV-TRoving Networks / Microchip Technology | IC EEPROM 8KBIT SPI 5MHZ 8SOIC | 
|   | 71342SA45J8Renesas Electronics America | IC SRAM 32KBIT PARALLEL 52PLCC |