类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 256Mb (32M x 8, 16M x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 60ns |
访问时间: | 75 ns |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 56-TFSOP (0.724", 18.40mm Width) |
供应商设备包: | 56-TSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IDT71P79804S250BQG8Renesas Electronics America |
IC SRAM 18MBIT PARALLEL 165CABGA |
|
IS42S16320B-7BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 512MBIT PARALLEL 54WBGA |
|
IS45S32400E-7BLA1ISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 90TFBGA |
|
PF48F4400P0VBQ0AMicron Technology |
IC FLASH 512MBIT PARALLEL 88SCSP |
|
AT29LV020-10TIRoving Networks / Microchip Technology |
IC FLASH 2MBIT PARALLEL 32TSOP |
|
CY7C036A-15ACCypress Semiconductor |
IC SRAM 288KBIT PARALLEL 100TQFP |
|
W631GG6KB12IWinbond Electronics Corporation |
IC DRAM 1GBIT PARALLEL 96WBGA |
|
MT48V8M16LFF4-8 XT:G TRMicron Technology |
IC DRAM 128MBIT PARALLEL 54VFBGA |
|
MT29E768G08EEHBBJ4-3:BMicron Technology |
IC FLASH 768GBIT PAR 132VBGA |
|
CY7C1021CV26-15ZXECypress Semiconductor |
IC SRAM 1MBIT PARALLEL 44TSOP II |
|
IS61LV12824-10BLISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 3MBIT PARALLEL 119PBGA |
|
70914S25PFGIRenesas Electronics America |
IC SRAM 36KBIT PARALLEL 80TQFP |
|
IDT71256L20YRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 28SOJ |