类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 128Kb (16K x 8) |
内存接口: | SPI |
时钟频率: | 3 MHz |
写周期时间 - 字,页: | 5ms |
访问时间: | - |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 16-SOIC (0.154", 3.90mm Width) |
供应商设备包: | 16-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT29F64G08CBCABH1-10Z:A TRMicron Technology |
IC FLASH 64GBIT PARALLEL 100VBGA |
|
AT49F001T-55PIRoving Networks / Microchip Technology |
IC FLASH 1MBIT PARALLEL 32DIP |
|
70V37L15PFRenesas Electronics America |
IC SRAM 576KBIT PARALLEL 100TQFP |
|
IDT71V424L15PHIRenesas Electronics America |
IC SRAM 4MBIT PARALLEL 44TSOP II |
|
AT93C56AY1-10YI-1.8Roving Networks / Microchip Technology |
IC EEPROM 2KBIT SPI 2MHZ 8MAP |
|
S29AL016J55TFA023Cypress Semiconductor |
IC FLASH 16MBIT PARALLEL 48TSOP |
|
93AA76B-I/STRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 3MHZ 8TSSOP |
|
IDT70P3517S233RMRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 576FCBGA |
|
FM21LD16-60-BGTRCypress Semiconductor |
IC FRAM 2MBIT PARALLEL 48FBGA |
|
AT27LV010A-90VIRoving Networks / Microchip Technology |
IC EPROM 1MBIT PARALLEL 32VSOP |
|
IDT71V2548S133BGRenesas Electronics America |
IC SRAM 4.5MBIT PARALLEL 119PBGA |
|
MT48LC4M16A2TG-6 IT:GMicron Technology |
IC DRAM 64MBIT PAR 54TSOP II |
|
70V9089L12PFI8Renesas Electronics America |
IC SRAM 512KBIT PARALLEL 100TQFP |